Laser annealing of hydrogen implanted amorphous silicon
Amorphous silicon, prepared by silicon bombardment at energies of 200 to 250 keV, was implanted with 40 keV H/sup +//sub 2/ to peak concentrations up to 15 at .% and recrystallized in air by single 20 nsec pulses at 1.06 ..mu..m from a Nd:glass laser. Amorphous layer formation and recrystallization were verified using Raman spectroscopy and ion backscattering/channeling analysis. Hydrogen concentrations and profiles were studied using nuclear reaction analysis, and infrared absorption was used to study the effects of recrystallization on the chemical bonding of hydrogen. Hydrogen is found to inhibit crystallization and blistering is observed for high hydrogen concentrations although continuous recrystallized layers can be formed for material with low (< or approx. =1 at .%) initial hydrogen concentrations. Up to 40% of the implanted hydrogen can be retained and is uniformly distributed from the initial implant depth to the surface upon recrystallization, but ion backscattering/channeling measurements indicate that the material has a higher level of disorder when the hydrogen is present. Infrared absorption measurements indicate that the hydrogen in the amorphous silicon is bonded predominantly in monohydride (SiH) centers. After annealing, several well-defined Si-H vibrational frequencies are observed, similar to the pattern for hydrogen-implanted single crystal silicon.
- Research Organization:
- Sandia Laboratories, Albuquerque, NM 87185
- OSTI ID:
- 6260301
- Report Number(s):
- CONF-781121-; TRN: 79-015847
- Journal Information:
- AIP (Am. Inst. Phys.) Conf. Proc.; (United States), Vol. 50:1; Conference: Annual meeting of Materials Research Society, Boston, MA, USA, 28 Nov 1978
- Country of Publication:
- United States
- Language:
- English
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