Ultra-shallow junction formation using very low energy B and BF{sub 2} sources
- North Carolina State Univ., Raleigh, NC (United States)
- Varian Ion Implant Systems, Gloucester, MA (United States)
- Varian Ginzton Research Center, Palo Alto, CA (United States)
Ultra-shallow junctions were formed using 0.5 - 8.9 keV B and BF{sub 2} ion implantation and plasma doping (PLAD) in conjunction with rapid thermal annealing, RTA, or furnace annealing. The effect of pre-amorphization and solid phase epi (SPE) regrowth on dopant retention, sheet resistance, and junction depth was quantified. The PLAD junctions were comparable to those formed by BF{sub 2} ion implantation. After a 550{degrees}C SPE anneal, preamorphized PLAD junctions had nearly 100% dopant activation. Using 0.5 kV PLAD, junction depths less than 40 nm deep were obtained for 10 sec annealing at 950{degrees}C. In preamorphized PLAD junctions, transient enhanced diffusion (TED) and dopant trapping at end-of-range damage was seen at very low temperature (550{degrees}C). Preamorphization eliminated channeling but enhanced diffusion such that when the boron energy was 0.5 keV or less, preamorphized junctions were deeper after annealing for 10 seconds at 850{degrees}C or higher. A 48 nm deep PLAD junction was successfully incorporated in a 0.18/0.25 {mu}m PMOS technology.
- OSTI ID:
- 621291
- Report Number(s):
- CONF-9606110-; CNN: Grant CDR 8721505; TRN: 98:002114-0034
- Resource Relation:
- Conference: 11. international conference on ion implantation technology, Austin, TX (United States), 17-21 Jun 1996; Other Information: PBD: 1996; Related Information: Is Part Of Ion implantation technology - 96; Ishida, E.; Banerjee, S.; Mehta, S. [eds.] [and others]; PB: 859 p.
- Country of Publication:
- United States
- Language:
- English
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