Reorientation of misfit dislocations during annealing in InGaAs/GaAs(001) interfaces

Conference · Thu Apr 01 00:00:00 EST 1993

OSTI ID:6204726

Chen, Y; Liliental-Weber, Z; Washburn, J ^[1]; Klem, J F; Tsao, J Y ^[2]

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1. Lawrence Berkeley Lab., CA (United States)
2. Sandia National Labs., Albuquerque, NM (United States)

Transmission electron microscopy is applied to investigate the effect of postannealing on misfit dislocations in an In[sup 0.2]Ga[sup 0.8]As/GaAs(001) heterostructure. An orthogonal array of 60[degree] dislocations along [110] and [110] directions was observed in the interfaces of the samples grown by MBE at 520C. When the as-grown samples were annealed at temperatures ranging from 600 to 800C, the 60[degree] dislocations were gradually reoriented by dislocation reactions occurring at the 90[degree] intersections followed by nonconservative motion driven by dislocation line tension and the residual elastic misfit strain. The final result of this process was a dislocation array lying along [100] and [center dot] [010] directions. The reoriented u =<100> dislocation has a Burgers vector b = a/2 <101>, which is the same as that of 60[degree] dislocation, but the edge component of its Burgers vector in the (001) interfacial plane is larger than that of 60[degree] dislocation by a factor of [radical]2, resulting in a greater contribution to elastic strain relaxation. This nonconservative reorientation of 60[degree] dislocations to form the u=<100> dislocations represents a new strain relaxation mechanism in diamond or zinc blende semiconductor heterostructures.

• Research Organization: Lawrence Berkeley Lab., CA (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC03-76SF00098; AC04-76DP00789
• OSTI ID: 6204726
• Report Number(s): LBL-34070; CONF-930405-19; ON: DE93015046
• Resource Relation: Conference: Spring meeting of the Materials Research Society, San Francisco, CA (United States), 12-16 Apr 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
DISLOCATIONS
HETEROJUNCTIONS
INDIUM ARSENIDES
ANNEALING
INTERFACES
TRANSMISSION ELECTRON MICROSCOPY
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
GALLIUM COMPOUNDS
HEAT TREATMENTS
INDIUM COMPOUNDS
JUNCTIONS
LINE DEFECTS
MICROSCOPY
PNICTIDES
SEMICONDUCTOR JUNCTIONS
360602* - Other Materials- Structure &amp; Phase Studies