Integrated silicon grid ion extraction system for O sub 2 processes

Journal Article · Thu Nov 01 00:00:00 EST 1990 · Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA)

DOI:https://doi.org/10.1116/1.585145· OSTI ID:6204343

Korzec, D; Engemann, J; Bansky, J; Keller, H M ^[1]

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1. University of Wuppertal, Department of Electrical Engineering, 5600 Wuppertal 1, West Germany (DE)

A novel multibeamlet very low energy ion extraction optic technology avoiding cumbersome grid readjustment and thermal degradation of beam properties during a reactive process has been developed. In this approach anisotropically etched silicon grids ((100)-oriented Si wafers) are permanently integrated into a holder made of layered ceramics or micromachined AlN. The performance of such extraction systems having 300, 600, and 900 {mu}m grid separation was tested in a 3 cm capacitively coupled rf-ion source. Stable system operation with use of oxygen has been achieved for an extended period of time ({gt}100 h) for a total extraction voltage of 140 V which represents the maximum voltage to be applied for a grid separation of 0.3 mm. Additionally detailed Faraday-cup measurements of the extracted ion beam have been carried out for a total voltage range of 0--600 V, a vacuum chamber pressure of 1{times}10{sup {minus}4}--1{times}10{sup {minus}3} mbar, rf-power levels of 10--170 W, a net-to-total voltage ratio of 0.5--1.0 and an axial magnetic field of up to 22 mT. For O{sub 2} an ion current density of 1.3 mA/cm{sup 2} could be extracted with ions having a mean energy of 60 eV. Even for energies as low as 50-eV current densities of 0.8 mA/cm{sup 2} could be achieved. In combination with the filamentless capacitively coupled rf source used, this approach has promise in various fields of materials research and processing such as ion beam assisted deposition of high-{ital T}{sub {ital c}} YBaCuO layers and etching/modification of diamondlike, diamond and polymer thin films.

• OSTI ID: 6204343
• Journal Information: Journal of Vacuum Science and Technology, B: Microelectronics Processing and Phenomena; (USA), Vol. 8:6; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ION SOURCES
PERFORMANCE
OXYGEN IONS
BEAM EXTRACTION
BEAM PRODUCTION
ALUMINIUM NITRIDES
CURRENT DENSITY
DIAMONDS
ETCHING
EV RANGE
GRIDS
HIGH-TC SUPERCONDUCTORS
OPERATION
POLYMERS
SILICON
THIN FILMS
ALUMINIUM COMPOUNDS
CARBON
CHARGED PARTICLES
ELECTRODES
ELEMENTAL MINERALS
ELEMENTS
ENERGY RANGE
FILMS
IONS
MINERALS
NITRIDES
NITROGEN COMPOUNDS
NONMETALS
PNICTIDES
SEMIMETALS
SUPERCONDUCTORS
SURFACE FINISHING
640301* - Atomic
Molecular & Chemical Physics- Beams & their Reactions