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Title: Physical characterization of Pb{sub 1}Zr{sub 0.2}Ti{sub 0.8}O{sub 3} prepared by the sol-gel process

Journal Article · · Journal of the Electrochemical Society
DOI:https://doi.org/10.1149/1.2044078· OSTI ID:61504
; ;  [1];  [2];  [3]
  1. Auburn Univ., AL (United States)
  2. National Univ. of Singapore (Singapore). Dept. of Physics
  3. Motorola Inc., Austin, TX (United States). Advanced Products Research and Development Lab.

The authors have used Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Rutherford backscattering spectroscopy (RBS) to characterize lead zirconate-lead titanate (PbZrO{sub 3}-PbTiO{sub 3}) of stoichiometry Pb{sub 1}Zr{sub 0.2}Ti{sub 0.8}O{sub 3} prepared by the sol-gel process. The films were deposited on a sputtered film of Pt and annealed at 700 C for 30 min. Dramatic AES and XPS chemical effects are observed in the film due to charge transfer between Ti and Zr and O; the binding energy of the PZT XPS Ti2p{sub 3/2} (Zr3d{sub 5/2}) orbital shifts +5.2 eV (+4.3 eV) compared to the element and substantial shape changes are observed in the AES Ti(LMM) and O(KLL) peaks. Raman spectroscopy at both 300 and 80 K show that mode frequencies shift upward with decreasing temperature in accord with soft mode theory. Rutherford backscattering spectroscopy (RBS) indicates that the stoichiometry of Pb{sub 1}Zr{sub 0.2}Ti{sub 0.8}O{sub 3} on Pt changes little during 700 C thermal annealing in oxygen because the oxygen from the gas phase replaces the oxygen lost to the substrate by thermal diffusion.

Sponsoring Organization:
USDOE
OSTI ID:
61504
Journal Information:
Journal of the Electrochemical Society, Vol. 142, Issue 2; Other Information: PBD: Feb 1995
Country of Publication:
United States
Language:
English