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Title: Investigation of hydrogenated amorphous silicon films and Schottky barrier junctions fabricated by the glow dischage technique

Thesis/Dissertation ·
OSTI ID:6142855

The goal of this research work is to test experimentally, how the parameters of the d.c. glow discharge silane process influence the electronic parameters of the resultant a-Si:H films and the metal a-Si:H junctions. The structure of the films was studied using x-ray diffraction and SEM techniques. Infrared spectroscopy was employed to examine different hydrogen environments in the films. A theoretical model of the amorphous silicon photovoltaic cell, which allowed the development of a computer simulation program for the solar cell operation, has been derived. The films deposited in the three electrode system under bias revealed different composition and, apparently associated with it, better semiconductor quality, than the films deposited in the two electrode system. The dark conductivity of the films was found to be 2.10/sup 5/ (ohm cm)/sup -1/ with activation energy ..delta..E = 0.33 eV. The carrier transport in the films was found to be due to electrons in the extended states at temperatures above 240 to 280/sup 0/K. At low temperatures phonon assisted hopping transport was significant. The photocells made on the films deposited under the substrate bias revealed both dark and illuminated current-voltage characteristics superior to those of photocells made on the cathodic films. The experimental results of the photocell measurements have been compared with a theoretical data obatained from numerical calculations of the photocell model.

OSTI ID:
6142855
Resource Relation:
Other Information: Thesis (Ph. D.)
Country of Publication:
United States
Language:
English