New in situ electron beam patterning process for GaAs using an electron-cyclotron-resonance plasma-oxidized mask and Cl[sub 2] gas etching

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:6132985

Takado, N; Kohmoto, S; Sugimoto, Y; Ozaki, M; Sugimoto, M; Asakawa, K ^[1]

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1. NEC Corp., Ibaraki (Japan)

A new electron beam (EB) patterning process capable of resistless nanofabrication for GaAs has been developed using enclosed continuous-vacuum processes. These processes are surface oxidation by electron cyclotron resonance (ECR) O[sub 2] plasma, oxidized-surface modification by EB irradiation, and subsequent etching by Cl[sub 2] gas. The time and oxygen gas pressure required for the oxidation are greatly reduced, compared to other oxidation methods, by using ECR plasma to form an oxide mask for Cl[sub 2] gas etching. The plasma-oxidized mask without EB irradiation cannot be removed by Cl[sub 2] gas etching even for 4 h at a sample temperature of 100[degrees]C. In spite of its resistance to Cl[sub 2] gas etching, the mask can be easily removed by thermal treatment of the sample at about 620[degrees]C in an As atmosphere. 18 refs., 6 figs.

• OSTI ID: 6132985
• Report Number(s): CONF-920575-; CODEN: JVTBD9; TRN: 93-015847
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 10:6; Conference: Symposium on electron, ion and photon beams, Orlando, FL (United States), 26-29 May 1992; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
ELECTRON BEAM MACHINING
SURFACE FINISHING
SPECIFICATIONS
CHLORINE
ELECTRON CYCLOTRON-RESONANCE
ETCHING
MASKING
MICROSTRUCTURE
TOPOGRAPHY
ARSENIC COMPOUNDS
ARSENIDES
CYCLOTRON RESONANCE
ELEMENTS
GALLIUM COMPOUNDS
HALOGENS
MACHINING
NONMETALS
PNICTIDES
RESONANCE
360605* - Materials- Radiation Effects
360601 - Other Materials- Preparation & Manufacture