The electrical properties of metal contact Au and Ti on p-type HgCdTe

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:6107183

Bahir, G; Adar, R; Fastow, R ^[1]

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1. Technion-Israel Inst. of Tech., Haifa (Israel)

Schottky barrier photodiodes have been fabricated on p-type Hg{sub 1{minus}x}Cd{sub x}Te, composition x = 0.22 and carrier concentration from 6 {times} 10{sup 15} to 5 {times} 10{sup 16} cm{sup {minus}3}, with Au and Ti as contact metals. It has been found that Au barrier height is lower than that of Ti for all carrier concentrations. Low temperature annealing, 75C for 24 h, reduces the effective Au barrier height and raises the Ti barrier height. The electrical results are correlated with Auger depth profiling of the difference interfaces, and transport mechanisms are proposed.

• OSTI ID: 6107183
• Report Number(s): CONF-9009402-; CODEN: JVTBD
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:2; Conference: Workshop on high-density plasma techniques and processes for integrated circuit fabrication, Burlingame, CA (United States), 11-12 Sep 1990; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
GOLD
ELECTRICAL PROPERTIES
PHOTODIODES
FABRICATION
TITANIUM
ANNEALING
AUGER EFFECT
CADMIUM ALLOYS
MERCURY ALLOYS
P-TYPE CONDUCTORS
SCHOTTKY BARRIER DIODES
TELLURIUM ALLOYS
ALLOYS
ELEMENTS
HEAT TREATMENTS
MATERIALS
METALS
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
TRANSITION ELEMENTS
360606* - Other Materials- Physical Properties- (1992-)
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)