Device quality AlGaAs/GaAs heterostructures grown in a multichamber organometallic vapor phase epitaxial apparatus
The use of a vertical multichamber organometallic vapor phase epitaxial (OMVPE) reactor for the growth of compound semiconductors is described. The formation of abrupt AlGaAs/GaAs heterostructures has been achieved by positioning the substrates by rotation in growth zones with the appropriate combinations of the sources; trimethylgallium, trimethylaluminum, and arsine. Photoluminescence, Raman spectroscopy, and cross-sectional transmission electron microscopy are used to demonstrate the optical quality and structural properties of the epitaxial films produced by this variation of the OMVPE technique. Device quality films are demonstrated by the fabrication of all superlattice separate confining laser structures emitting over the wavelength range from 740 to 855 nm.
- Research Organization:
- General Electric Electronics Laboratory, Syracuse, New York 13221 and School of Electrical Engineering, Cornell University, Ithaca, New York 14853
- OSTI ID:
- 6081230
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 48:14
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
CRYSTAL STRUCTURE
OPTICAL PROPERTIES
VAPOR PHASE EPITAXY
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
OPERATION
SUPERLATTICES
FABRICATION
HETEROJUNCTIONS
LAYERS
ORGANOMETALLIC COMPOUNDS
TRANSMISSION ELECTRON MICROSCOPY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRON MICROSCOPY
EPITAXY
GALLIUM COMPOUNDS
JUNCTIONS
LASERS
MICROSCOPY
ORGANIC COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)