Halogen lamp annealing of ion-implanted silicon, and its application to solar cells

Conference · Tue May 01 00:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:6075952

Usami, A; Ando, M; Inove, Y; Yoshida, N

A method to fabricate silicon solar cell was developed around ion-implantation (p/sup +/, non-massanalyzed PH/sub 3/) and halogen lamp annealing for several seconds. Slight redistribution of ion-implanted dopants occurs for second order annealing time, and that increases as the annealing temperature increases. Minority carrier diffusion length in the base region of the PH/sub 3/ implanted cells slightly decreases as the annealing temperature increases. But in P/sup +/ implanted cell, diffusion length in the base region dose not depend on the annealing temperature and time. Maximum conversion efficiencies of P/sup +/ and PH/sub 3/ implanted HLA cells are 10.1% (AM1) and 9.4% (AM1) without AR coating and BSF structures.

• Research Organization: Department of Electronics, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya
• OSTI ID: 6075952
• Report Number(s): CONF-840561-
• Journal Information: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
ANNEALING
FABRICATION
ION IMPLANTATION
DIFFUSION LENGTH
DOPED MATERIALS
EFFICIENCY
HALOGENS
HEAT SOURCES
LIGHT BULBS
P-TYPE CONDUCTORS
PHOSPHORUS HYDRIDES
SILICON
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
LENGTH
MATERIALS
NONMETALS
PHOSPHORUS COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR MATERIALS
SEMIMETALS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion