p-buffer layer dependent drift mobility profiles in GaAs metal-semiconductor field-effect transistors

Conference · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)

OSTI ID:6071029

Steiner, K; Uchitomi, Naotaka ^[1]

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1. Toshiba Corp., Kawasaki (Japan)

Mobility profiles in WN{sub x}-LDD (lightly doped drain region) and WN{sub x}-BPLDD (buried p-type buffer lightly doped drain region) GaAs metal-semiconductor field-effect transistor (MESFET) with various p-buffer layers are discussed. The mobility profiles are evaluated using frequency dependent admittance studies. A slightly doped p-buffer layer seems to have no influence on the carrier concentration while there is a significant modification of the mobility profile at lower gate voltages. The channel drift mobility in BPLDD-MESFETs with heavily implanted p-buffer layers is degraded over the whole gate voltage swing. Mg-p-type implants have no effect on the carrier profile near its peak while the tail region is shifted to higher gate voltages. However, to observe a significant sharpening of the channel electron concentration profile a certain amount of Mg implantation dose seems to be necessary.

• OSTI ID: 6071029
• Report Number(s): CONF-9009402-; CODEN: JVTBD
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 9:2; Conference: Workshop on high-density plasma techniques and processes for integrated circuit fabrication, Burlingame, CA (United States), 11-12 Sep 1990; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
FIELD EFFECT TRANSISTORS
ELECTRON MOBILITY
GALLIUM ARSENIDES
DOPED MATERIALS
ELECTRON CHANNELING
INTEGRATED CIRCUITS
JAPAN
MAGNESIUM
ALKALINE EARTH METALS
ARSENIC COMPOUNDS
ARSENIDES
ASIA
CHANNELING
DEVELOPED COUNTRIES
ELECTRONIC CIRCUITS
ELEMENTS
GALLIUM COMPOUNDS
MATERIALS
METALS
MICROELECTRONIC CIRCUITS
MOBILITY
PARTICLE MOBILITY
PNICTIDES
SEMICONDUCTOR DEVICES
TRANSISTORS
360606* - Other Materials- Physical Properties- (1992-)