Ion-implantation effects in glasses
Ion implantation can be used to introduce network damage and to alter the chemical composition in glasses. Structural changes can be inferred from IR measurements near 1000 cm/sup -1/ and by optical absorption near 2150 A. Implantation induced damage decreases the implanted volume in fused silica with consequent changes in the refractive index, near-surface hardness, and surface tensile stress. Prior work in these areas is reviewed. Implantation into alkali silicate glasses depletes the alkali content in the implanted region. These changes allow preferential surface crystallization in Li/sub 2/O . 2SiO/sub 2/ glasses. Crystallization of amorphous SiO/sub 2/ can be induced by implantation of Li. Insight into the crystallization process is obtained by observing the associated ion movement using elastic recoil detection (ERD) and optical techniques. Implantation of 20 keV H shows that saturation of implanted H-sites in fused silica occurs at about 2.2 x 10/sup 21/ H/cm/sup 3/ in agreement with estimates of the number of available interstitial sites. Details of H and D interactions in fused silica were studied as a function of fluence and temperature. Results are of interest to studies of corrosion in glasses considered for nuclear waste encapsulation and for components in fusion reactors.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6067079
- Report Number(s):
- SAND-81-0819C; CONF-8106132-1; ON: DE81027208; TRN: 81-016103
- Resource Relation:
- Conference: International conference on radiation effects in glasses, Arco, Italy, 30 Jun 1981
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ion-implantation induced crystallization of glass
Collisional energy deposition threshold for extended damage depths in ion-implanted silicates
Related Subjects
GLASS
ION IMPLANTATION
PHYSICAL RADIATION EFFECTS
LITHIUM OXIDES
ARGON IONS
CRYSTALLIZATION
EXPERIMENTAL DATA
HARDNESS
HELIUM IONS
HYDROGEN IONS 1 PLUS
KEV RANGE 10-100
KEV RANGE 100-1000
KRYPTON IONS
LITHIUM IONS
NEON IONS
RANGE
REFRACTIVITY
SILICON OXIDES
TENSILE PROPERTIES
XENON IONS
ALKALI METAL COMPOUNDS
CATIONS
CHALCOGENIDES
CHARGED PARTICLES
DATA
ENERGY RANGE
HYDROGEN IONS
INFORMATION
IONS
KEV RANGE
LITHIUM COMPOUNDS
MECHANICAL PROPERTIES
NUMERICAL DATA
OPTICAL PROPERTIES
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
RADIATION EFFECTS
SILICON COMPOUNDS
360605* - Materials- Radiation Effects