TEM investigation of polar-on-nonpolar epitaxy: GaAs-AlGaAs on (100) Ge

Conference · Thu Nov 01 00:00:00 EST 1984

OSTI ID:6058359

Mazur, J H; Washburn, J; Henderson, T; Klem, J; Masselink, W T; Fischer, R; Morkoc, H

Morphologically excellent GaAs and AlGaAs epitaxial layers have been grown on (100) Ge substrates by molecular-beam epitaxy (MBE). Transmission electron-microscopy (TEM) studies of the thin-film cross sections revealed that defects, most probably antiphase domains, were contained within a 20 to 30 nm thick initial layer near the GaAs/Ge interface, formed with a 0.1-..mu..m/h growth rate at 500/sup 0/C. A reduction of defects occurred in the remaining 0.1-..mu..m thick layer, for which the growth rate and temperature had been increased to 1 ..mu..m/h and 580/sup 0/C, respectively. The interface between this GaAs layer and a subsequently grown 35-nm thick AlAs film was found to undulate with a period of 150 to 200 nm and an amplitude of 5 to 10 nm. Such large undulations were not observed in AlGaAs-GaAs superlattices grown after an additional deposition of 2-..mu..m GaAs. High-resolutin electron-microscopy observations suggest that transitions between different layers are abrupt on the atomic scale. In addition, modulation-doped field-effect transistors fabricated on these layers had similar characteristics to those obtained with MBE layers grown on GaAs substrates. These results demonstrate that the (100) Ge surface is suitable for MBE polar-on-nonpolar semiconductor growth and that the integration of III-V films with silicon electronic devices via epitaxial Ge on Si is feasible, provided that epitaxial Ge of sufficient quality grown on Si is available.

• Research Organization: Lawrence Berkeley Lab., CA (USA); Illinois Univ., Urbana (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6058359
• Report Number(s): LBL-18921; CONF-841157-83; ON: DE85007613
• Resource Relation: Conference: Materials Research Society annual meeting, Boston, MA, USA, 26 Nov 1984
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
47 OTHER INSTRUMENTATION
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
MOLECULAR BEAM EPITAXY
TRANSMISSION ELECTRON MICROSCOPY
GALLIUM ARSENIDES
CRYSTAL DEFECTS
GERMANIUM
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GALLIUM COMPOUNDS
METALS
MICROSCOPY
PNICTIDES
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440300 - Miscellaneous Instruments- (-1989)
360601 - Other Materials- Preparation & Manufacture