Low-current-threshold (GaAl)As visible lasers with emission wavelengths below 750 nm

Journal Article · Sun May 01 00:00:00 EDT 1983 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.332373· OSTI ID:6055006

Hayakawa, T; Yamamoto, S; Hayashi, H; Miyauchi, N; Yano, S; Hijikata, T

Low-current-threshold behavior of (GaAl)As v-channeled substrate inner stripe lasers emitting below 750 nm is presented. The variation of the threshold current of these devices with the lasing wavelength agrees with that of 1/eta/sub i/ calculated using the energy-band parameters where the indirect-direct crossover is assigned at the AlAs mole fraction of 0.45. cw operation was achieved at as short as 688 nm. These performances result from the improved laser properties by growing the Te-doped cladding layer on top of the active layer using the p-type GaAs as a substrate.

• Research Organization: Central Research Laboratories, Sharp Corporation, Tenri, Nara 632, Japan
• OSTI ID: 6055006
• Journal Information: J. Appl. Phys.; (United States), Vol. 54:5
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
ALUMINIUM ARSENIDES
CONFIGURATION
DOPED MATERIALS
ENERGY GAP
EXPERIMENTAL DATA
GALLIUM ARSENIDES
MATHEMATICAL MODELS
P-TYPE CONDUCTORS
SUBSTRATES
TELLURIUM
VISIBLE RADIATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTS
GALLIUM COMPOUNDS
INFORMATION
LASERS
MATERIALS
NUMERICAL DATA
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SEMIMETALS
420300* - Engineering- Lasers- (-1989)