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Title: Excitation profiles of resonance electronic Raman scattering in ErPO/sub 4/ crystals

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)

The intensities of electronic Raman-scattering transitions between theground and excited crystal-field states of the ground/sup 4/I/sub 15/2/ multiplet of Er/sup 3 +/ incrystals ErPO/sub 4/ were measured as a function of excitationfrequency in the region of an intermediate-state resonance between the/sup 4/I/sub 15/2/ ground state and a crystal-field state ofthe /sup 4/F/sub 7/2/ multiplet. It is shown that for excitationfrequencies near the intermediate-state resonance, the observed spectra are theresult of electronic Raman scattering and are not due to absorption followed byfluorescence. No such determination could be made for direct resonanceexcitation. Enhancements of the intensities of the electronic Raman scatteringby a factor on the order of 100 are reported. The electronic Raman-scatteringexcitation profiles (excitation frequency versus enhancement) are found to beasymmetric in excitation frequency about the resonance. These profiles can beaccurately modeled using standard electronic Raman intensity theory and themeasured oscillator strengths and linewidths of the/sup 4/I/sub 15/2//r arrow//sup 4/F/sub 7/12/ one photontransitions.

Research Organization:
Department of Physics, University of California, Berkeley, California 94720(US); Materials and Chemical Sciences Division, Lawrence Berkeley Laboratory, 1 Cyclotron Road, Berkeley, California 94720; Solid State Division, Oak Ridge National Laboratory, P.O. Box 2008, Oak Ridge, Tennessee 37831-6032
DOE Contract Number:
AC03-76SF00098
OSTI ID:
6050197
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Vol. 40:2
Country of Publication:
United States
Language:
English