Fabrication of cleaved semiconductor lasers
A process is described for producing a semiconductor laser by cleaving a wafer comprising n-type InP compound semiconductors so that part of the cleaved surface is in the active area of the semiconductor laser comprising the steps of first etching a portion of the n-type InP compound semiconductor in an electrolytic solution. The electrolytic solution consists of HCl and then producing stress on the wafter to produce the cleaved surface characterized in that the etching procedure is an electrochemical photoetching procedure carried out by: a. applying a potential to the n-type InP semiconducting compound which is between -0.5 and 1.0 volts on the SCE scale; b. illuminating the part of the surface of the n-type InP compound semiconductor to be etched with radiation of sufficient energy to produce holes in the valence band.
- Assignee:
- American Telephone and Telegraph Co., AT and T Bell Labs., Murray Hill, NJ
- Patent Number(s):
- US 4689125
- OSTI ID:
- 6039761
- Resource Relation:
- Patent File Date: Filed date 28 May 1986
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
FABRICATION
CLEAVAGE
ELECTRIC POTENTIAL
ELECTROCHEMISTRY
ELECTROLYTES
ETCHING
HOLES
HYDROCHLORIC ACID
ILLUMINANCE
INDIUM PHOSPHIDES
N-TYPE CONDUCTORS
SEMICONDUCTOR MATERIALS
STRESSES
VALENCE
CHEMISTRY
CRYSTAL STRUCTURE
HYDROGEN COMPOUNDS
INDIUM COMPOUNDS
INORGANIC ACIDS
LASERS
MATERIALS
MICROSTRUCTURE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)