Single-crystal n-InAs coupled Josephson junction

Journal Article · Tue Jan 01 00:00:00 EST 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95809· OSTI ID:6015471

Kawakami, T; Takayanagi, H

A high electron mobility single-crystal n-InAs coupled Josephson junction with refractory metal Nb electrodes has been fabricated. Josephson current has been obtained for devices with electron carrier concentrations of 10/sup 16/--10/sup 18/ cm/sup -3/ and with Nb electrode spacings longer than 0.5 ..mu..m. The devices have a planar geometry with implicit potential for gate control. The rf sputter cleaning of the InAs surface prior to Nb deposition is found to have significant effects on the performance of the devices. The device characteristics are explained by the proximity effect theory.

• Research Organization: Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, 3-9-11, Midoricho, Musashino-shi, Tokyo 180, Japan
• OSTI ID: 6015471
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 46:1
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
JOSEPHSON JUNCTIONS
CARRIER DENSITY
FABRICATION
PERFORMANCE
ELECTRODES
ELECTRON MOBILITY
EXPERIMENTAL DATA
INDIUM ARSENIDES
NIOBIUM
PROXIMITY EFFECT
SPUTTERING
SURFACE CLEANING
ARSENIC COMPOUNDS
ARSENIDES
CLEANING
DATA
ELEMENTS
INDIUM COMPOUNDS
INFORMATION
JUNCTIONS
METALS
MOBILITY
NUMERICAL DATA
PARTICLE MOBILITY
PNICTIDES
SUPERCONDUCTING JUNCTIONS
SURFACE FINISHING
TRANSITION ELEMENTS
420201* - Engineering- Cryogenic Equipment & Devices