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Title: Etching of tungsten with XeF/sub 2/: An x-ray photoelectron spectroscopy study

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.339054· OSTI ID:6000348

In situ x-ray photoelectron spectroscopy measurements of both W(100) crystals and sputter-deposited tungsten films exposed to a molecular beam of XeF/sub 2/ with and without an accompanying argon ion beam have yielded the fluorine coverage and the chemical states of the adsorbed fluorine as a function of temperature, exposure, and ion dose. WF, WF/sub 2/, WF/sub 3/, and WF/sub 4/ were found to exist on the tungsten surfaces. Room and elevated temperature exposures of clean tungsten resulted in the surface population of mainly WF species with WF/sub 4/ observed on nonannealed samples. Ion dose promoted the formation of higher fluorine coordination species from the WF leading to the formation of volatile WF/sub 6/ and thus resulting in ion-enhanced etching of tungsten.

Research Organization:
Department of Physics, University of Houston, Houston, Texas 77004
OSTI ID:
6000348
Journal Information:
J. Appl. Phys.; (United States), Vol. 62:11
Country of Publication:
United States
Language:
English