Rapid thermal annealing of ion-implanted silicon and gallium arsenide
The annealing of ion implantation damage (in the form of amorphous layers and/or the layers containing only dislocation loops) in silicon and gallium arsenide have been investigated. The annealing of amorphous layers occurs by solid-phase-epitaxial growth and that of dislocation loops involves primarily loop-coalescence as a result of conservative climb and glide processes. The annealing of isolated loops occurs primarily by a bulk diffusion process. Almost a complete annealing of displacement damage is possible for shallow implants provided loop-coalescence does not lead to the formation of cross-grid of dislocations. For deep implants, the free surface cannot provide an effective sink for defects as in the case of shallow implants. Dopant profiles can be controlled to less than 1000 A in layers having good electrical properties. The enhanced diffusion of dopants is observed probably due to entrapment of point defects in the annealed regions. 17 references, 11 figures.
- Research Organization:
- Oak Ridge National Lab., TN
- DOE Contract Number:
- W-7405-ENG-26
- OSTI ID:
- 5956533
- Journal Information:
- Mater. Res. Soc. Symp. Proc.; (United States), Vol. 23
- Country of Publication:
- United States
- Language:
- English
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