Injection locking of diode lasers

Journal Article · Sat Mar 01 00:00:00 EST 1986 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1986.1072979· OSTI ID:5935985

Hadley, G R

The authors present a theoretical analysis of the forward and reflected amplitudes in a diode laser oscillator cavity for both a single resonant mode and an injected signal. The analysis includes gain saturation and allows the gain coefficient at the injected frequency to be different from that at the resonant frequency. Analytic solutions for the axially dependent amplitudes are presented for the case of equal gain coefficients. For the more general case, a formula is presented for the intensity necessary for locking, which is shown to reduce in various limits to other expressions previously published. One immediate consequence of the present formalism is that the use of antireflection coatings on the diode end facets should act to reduce the injected signal intensity necessary for locking. In fact, reduction of the reflectivities to values of a few percent should enable locking over the entire gain curve with incident intensities which are small compared to the slave oscillator's normal output.

• Research Organization: Sandia National Labs., Albuquerque, NM
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5935985
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. QE-22:3
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
SEMICONDUCTOR LASERS
LASER CAVITIES
MODE LOCKING
AMPLITUDES
ANALYTICAL SOLUTION
ANTIREFLECTION COATINGS
FREQUENCY DEPENDENCE
GAIN
OSCILLATORS
REFLECTIVITY
RESONANCE
SEMICONDUCTOR DIODES
SIGNALS
AMPLIFICATION
COATINGS
ELECTRONIC EQUIPMENT
EQUIPMENT
LASERS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SURFACE PROPERTIES
420300* - Engineering- Lasers- (-1989)