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Title: Resistance noise in amorphous Ni-Zr: Hydrogen diffusion and universal conductance fluctuations

Journal Article · · Phys. Rev. B: Condens. Matter; (United States)

Resistance fluctuations with a power spectrum of approximately1//ital f/ have been studied in amorphous thin films ofNi/sub 30/Zr/sub 70/ andNi/sub 50/Zr/sub 50/ in the temperature range4/lt//ital T//lt/350 K. The primary noise-generating source was found tobe hydrogen contamination with concentrations up to roughly 30 at. %.Exceptionally large peaks in the spectral density versus /ital T/ correspondingto short-range hopping of hydrogen atoms were found between 90 and 200 K. Therms resistivity change due to short-range hopping of a hydrogen atom was foundto be larger than the average resistivity increase per atom, indicating theimportance of the random local environment. Below 50 K the noise increased withdecreasing temperature and was reduced by magnetic fields, indicating auniversal conductance-fluctuation-coupling mechanism.

Research Organization:
Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801(US); Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 West Green Street, Urbana, Illinois 61801
OSTI ID:
5932019
Journal Information:
Phys. Rev. B: Condens. Matter; (United States), Vol. 40:2
Country of Publication:
United States
Language:
English