Resistance noise in amorphous Ni-Zr: Hydrogen diffusion and universal conductance fluctuations
Resistance fluctuations with a power spectrum of approximately1//ital f/ have been studied in amorphous thin films ofNi/sub 30/Zr/sub 70/ andNi/sub 50/Zr/sub 50/ in the temperature range4/lt//ital T//lt/350 K. The primary noise-generating source was found tobe hydrogen contamination with concentrations up to roughly 30 at. %.Exceptionally large peaks in the spectral density versus /ital T/ correspondingto short-range hopping of hydrogen atoms were found between 90 and 200 K. Therms resistivity change due to short-range hopping of a hydrogen atom was foundto be larger than the average resistivity increase per atom, indicating theimportance of the random local environment. Below 50 K the noise increased withdecreasing temperature and was reduced by magnetic fields, indicating auniversal conductance-fluctuation-coupling mechanism.
- Research Organization:
- Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801(US); Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, 1304 West Green Street, Urbana, Illinois 61801
- OSTI ID:
- 5932019
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Vol. 40:2
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
HYDROGEN
DIFFUSION
NICKEL ALLOYS
ELECTRIC CONDUCTIVITY
ZIRCONIUM ALLOYS
AMORPHOUS STATE
ATOM TRANSPORT
ELECTRICAL PROPERTIES
FLUCTUATIONS
LOW TEMPERATURE
MEDIUM TEMPERATURE
METALLIC GLASSES
TEMPERATURE DEPENDENCE
THIN FILMS
ULTRALOW TEMPERATURE
VERY LOW TEMPERATURE
ALLOYS
ELEMENTS
FILMS
NEUTRAL-PARTICLE TRANSPORT
NONMETALS
PHYSICAL PROPERTIES
RADIATION TRANSPORT
VARIATIONS
360104* - Metals & Alloys- Physical Properties