Gamma-ray irradiation effects on VLSI geometry MOSFETs fabricated on laser recrystallized SOI wafers

Journal Article · Wed Dec 01 00:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336430· OSTI ID:5922155

Kim, J S; Bluzer, N

The authors have investigated the effects of radiation on the characteristics of NMOS and PMOS FETs having different channel length (1.3 ..mu.. m - 5 ..mu.. m). The FETs were fabricated on SOI wafers where the silicon (0.5 ..mu.. m) film was laser recrystallized. Gammairradiation (up to 200 Krad(Si)) was performed at 300 K while the devices were under bias (+10, 0, -10 volts). Radiation produced severe increases in the NMOS FETs subthreshold leakage currents. Smaller increases with irradiation were observed in the PMOS FET/sup 0/s subthreshold leakage currents. Radiation caused increases in the PMOS FET/sup 0/s threshold voltage with the largest shifts occuring for the +10 volts gate bias. The threshold voltage in NMOS devices decreased with exposure to ionizing irradiation. All the observed threshold shifts are consistent with net hole trapping in the SiO/sub 2/. The authors observed a monotonic dependence of the radiation induced threshold voltage shifts on the channel length of PMOS devices. Smaller threshold shifts were obtained for the shorter channel devices.

• Research Organization: Westinghouse Electric Corp., Advanced Technology Labs., P.O.B. 1521 MS 3531, Baltimore, MD 21205
• OSTI ID: 5922155
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. 29:6
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
FIELD EFFECT TRANSISTORS
RADIATION EFFECTS
MOSFET
FABRICATION
GAMMA RADIATION
GEOMETRY
IRRADIATION
LASERS
LEAKAGE CURRENT
RECRYSTALLIZATION
SILICON OXIDES
THRESHOLD DOSE
CHALCOGENIDES
CURRENTS
DOSES
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
IONIZING RADIATIONS
MATHEMATICS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
RADIATION DOSES
RADIATIONS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems