Self-aligned phosphorus doped polysilicon gate MOS device radiation hardening

Journal Article · Wed Dec 01 00:00:00 EST 1982 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1982.4336432· OSTI ID:5922148

Chang, C P

It is well known that processing steps strongly affect the radiation tolerance of MOS oxides. In this paper the authors present the effects of the ion implantation to form the source-drain regions of self-aligned polysilicon gate MOSFETs. Radiation hardness varies systematically with the n+ and the p+ ion implantation energies, and the masking polysilicon gate thickness. For a fixed polysilicon thickness, there is an optimum implantation energy allowed to give the best device performance and radiation behavior. Extending the implantation energy beyond the optimum tends to degrade the hardness. This is verified by the capacitor experiments. The shift in n-channel threshold for devices fabricated by the optimum radiation-hardened process developed here is decreased from -6.1V to -1.8V at 3 X 10/sup 5/ rads (Si) total dose. The p-channel threshold at 1 X 10/sup 6/ rads (Si) is decreased by 4.5 volts. The 8-bit Arithmetic Logic Unit (ALU) device from wafer to wafer, and lot to lot can be operated well up to 1 X 10/sup 6/ rads (Si).

• Research Organization: Hughes Aircraft Co., Newport Beach, CA 92663
• OSTI ID: 5922148
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Vol. 29:6
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MOS TRANSISTORS
ION IMPLANTATION
RADIATION HARDENING
CAPACITORS
COMPUTERS
FIELD EFFECT TRANSISTORS
HARDNESS
OXIDES
PHOSPHORUS
POLYCRYSTALS
RADIATION EFFECTS
SILICON
CHALCOGENIDES
CRYSTALS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
HARDENING
MECHANICAL PROPERTIES
NONMETALS
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMIMETALS
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems