Thermal reactions of disilane on Si(100) studied by synchrotron-radiation photoemission

Journal Article · Fri Oct 15 00:00:00 EDT 1993 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.48.11846· OSTI ID:5907936

Lin, D; Miller, T; Chiang, T ^[1]; Tsu, R; Greene, J E ^[2]

---

1. Department of Physics and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080 (United States)
2. Department of Materials Science and Engineering, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois at Urbana-Champaign, 1304 West Green Street, Urbana, Illinois 61801-3080 (United States)

H-terminated Si(100) surfaces were formed by saturation exposure of Si(100) to disilane at room temperature. Annealing these surfaces to progressively higher temperatures resulted in hydrogen desorption. This process, of basic importance to the growth of Si by atomic layer epitaxy using disilane, was studied by synchrotron-radiation photoemission. The Si 2[ital p] core-level line shape, the position of the Fermi level within the band gap, the work function, and the ionization potential were measured as a function of annealing temperature. These results revealed two steps in the thermal reaction preceding the recovery of the clean surface. The dihydride radicals on the surface are converted to monohydride radicals at 500--610 K, and the monohydride radicals decompose at 700--800 K.

• DOE Contract Number: FG02-91ER45439
• OSTI ID: 5907936
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 48:16; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DESORPTION
ANNEALING
SILANES
CHEMISORPTION
SILICON
SORPTIVE PROPERTIES
AMBIENT TEMPERATURE
EPITAXY
FERMI LEVEL
HYDROGEN
IONIZATION POTENTIAL
PHOTOEMISSION
TEMPERATURE DEPENDENCE
WORK FUNCTIONS
CHEMICAL REACTIONS
ELEMENTS
EMISSION
ENERGY LEVELS
FUNCTIONS
HEAT TREATMENTS
HYDRIDES
HYDROGEN COMPOUNDS
NONMETALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
SECONDARY EMISSION
SEMIMETALS
SEPARATION PROCESSES
SILICON COMPOUNDS
SORPTION
SURFACE PROPERTIES
360202* - Ceramics
Cermets
& Refractories- Structure & Phase Studies
360204 - Ceramics
Cermets
& Refractories- Physical Properties