Microstrain in laser-crystallized silicon islands on fused silica

Journal Article · Mon Feb 15 00:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93075· OSTI ID:5906418

Lyon, S A; Nemanich, R J; Johnson, N M; Biegelsen, D K

Residual strain in cw laser-crystallized silicon thin films has been measured with high spatial resolution (approx.5 ..mu..m) by Raman spectroscopy. Thin films of polycrystalline silicon were defined into moated islands and patterned stripes on fused silica substrates and encapsulated with silicon nitride. Raman scattering was used to measure local strain at various points in and near crystallized islands, and the results reveal that the silicon film is under tension. The observations indicate that a major component of the stress in the film arises from pinning of the silicon at the silicon-fused silica interface at the solidification temperature followed by differential thermal contraction.

• Research Organization: Xerox Palo Alto Research Center, Palo Alto, California 94304
• OSTI ID: 5906418
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 40:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
LASER-RADIATION HEATING
STRAINS
CRYSTALLIZATION
CRYSTALS
FILMS
INTERFACES
MELTING POINTS
POLYCRYSTALS
RADIATION EFFECTS
RAMAN EFFECT
RAMAN SPECTRA
SCATTERING
SILICON NITRIDES
SILICON OXIDES
SPATIAL RESOLUTION
STRESSES
SUBSTRATES
THICKNESS
CHALCOGENIDES
DIMENSIONS
ELEMENTS
HEATING
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PLASMA HEATING
PNICTIDES
RESOLUTION
SEMIMETALS
SILICON COMPOUNDS
SPECTRA
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE
360605* - Materials- Radiation Effects