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Title: Studies of deep-level defects and recombination parameters in one-mev electron and low energy proton irradiated (ALGA)AS-GAAS solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5902687

A detailed study of the radiation induced deep - level defects in (AlGa)As-GaAs solar cells irradiated by one-MeV electrons and low-energy protons has been carried out using Deep-Level Transient Spectroscopy (DLTS) technique for different irradiation energies, fluences, fluxes, annealing temperatures and annealing times. Carrier removal rate, defect activation energies, carrier capture cross sections, minority carrier lifetimes and diffusion lengths were determined from the C-V and DLTS measurements under different irradiation and annealing conditions. Results for both the electron and proton irradiation induced deep-level defects and their associated recombination parameters are presented in this paper.

Research Organization:
Department of Electrical Engineering, University of Florida, Gainesville, Florida
OSTI ID:
5902687
Report Number(s):
CONF-840561-
Journal Information:
Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
Country of Publication:
United States
Language:
English

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