Studies of deep-level defects and recombination parameters in one-mev electron and low energy proton irradiated (ALGA)AS-GAAS solar cells
A detailed study of the radiation induced deep - level defects in (AlGa)As-GaAs solar cells irradiated by one-MeV electrons and low-energy protons has been carried out using Deep-Level Transient Spectroscopy (DLTS) technique for different irradiation energies, fluences, fluxes, annealing temperatures and annealing times. Carrier removal rate, defect activation energies, carrier capture cross sections, minority carrier lifetimes and diffusion lengths were determined from the C-V and DLTS measurements under different irradiation and annealing conditions. Results for both the electron and proton irradiation induced deep-level defects and their associated recombination parameters are presented in this paper.
- Research Organization:
- Department of Electrical Engineering, University of Florida, Gainesville, Florida
- OSTI ID:
- 5902687
- Report Number(s):
- CONF-840561-
- Journal Information:
- Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States), Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDE SOLAR CELLS
CRYSTAL DEFECTS
IRRADIATION
RADIATION EFFECTS
RECOMBINATION
ACTIVATION ENERGY
ALUMINIUM ARSENIDES
ANNEALING
CARRIER LIFETIME
CHARGE CARRIERS
DIFFUSION LENGTH
ELECTRONS
GALLIUM ARSENIDES
MEASURING METHODS
PROTONS
SPECTROSCOPY
TEMPERATURE EFFECTS
THERMAL RADIATION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
CRYSTAL STRUCTURE
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ENERGY
EQUIPMENT
FERMIONS
GALLIUM COMPOUNDS
HADRONS
HEAT TREATMENTS
LENGTH
LEPTONS
LIFETIME
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PNICTIDES
RADIATIONS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion