Solar cell with improved N-region contact and method of forming the same

Patent · Tue Aug 07 00:00:00 EDT 1979

OSTI ID:5886376

Frosch, R A; Bube, K R

A method for forming an improved silicon solar cell having a shallow N-type region and a contact characterized by reduced contact resistance is described. The cell is characterized by a silicon semiconductor wafer of P-type material in which a shallow region of N-type material has been diffused. A sintered silver contact formed from silver powder and silver metaphosphate is affixed to the N-type region, establishing a region of increased carrier concentration. Commercial techniques for depositing contacts on the N-type region are briefly reviewed.

• Assignee: TIC; ERA-05-002781; EDB-79-135986
• Patent Number(s): US 4163678
• OSTI ID: 5886376
• Resource Relation: Patent File Date: Filed date 30 Jun 1978
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
ELECTRIC CONTACTS
FABRICATION
ALUMINIUM
ALUMINIUM ALLOYS
DIFFUSION
ELECTRIC CONDUCTIVITY
N-TYPE CONDUCTORS
SILVER
SILVER COMPOUNDS
SINTERED MATERIALS
ALLOYS
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SOLAR CELLS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
140501* - Solar Energy Conversion- Photovoltaic Conversion