Rapid thermal and pulsed laser annealing of boron fluoride-implanted silicon

Journal Article · Mon Apr 15 00:00:00 EST 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335411· OSTI ID:5870587

Narayan, J; Holland, O W; Christie, W H; Wortman, J J

Characteristics of rapid thermal and pulsed laser annealing have been investigated in boron fluoride- (BF/sup +//sub 2/ and BF/sup +//sub 3/) -implanted silicon using cross-section and plan-view electron microscopy. The amorphous layers recrystallize by the solid-phase-epitaxial growth process, while the dislocation loops below the amorphous layers coarsen and evolve into a network of dislocations. The dislocations in this band getter fluorine and fluorine bubbles associated with dislocations are frequently observed. The secondary-ion mass spectrometry techniques were used to study concomitant boron and fluorine redistributions. The as-implanted Gaussian boron profile broadens as a function of time and temperature of annealing. However, the fluorine concentration peak is observed to be associated with dislocation band, and the peak grows with increasing time and temperature of annealing. The electrical properties were investigated using van der Pauw measurements. The electrical activation of better than 90% and good Hall mobility were observed in specimens with less than 500-A dopant-profile broadening. In pulsed laser-annealed specimens, the boron profile broadens both toward the surface and into the deeper regions of the crystal. However, the fluorine concentration profile exhibits a decrease in peak concentration with only a limited broadening.

• Research Organization: Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 5870587
• Journal Information: J. Appl. Phys.; (United States), Vol. 57:8
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
AMORPHOUS STATE
ANNEALING
DISLOCATIONS
ELECTRICAL PROPERTIES
ION IMPLANTATION
RECRYSTALLIZATION
BORON FLUORIDES
DAMAGE
ELECTRON MOBILITY
EPITAXY
GETTERING
HALL EFFECT
ION SPECTROSCOPY
LASER RADIATION
LASER-RADIATION HEATING
MASS SPECTROSCOPY
PHOTON COLLISIONS
BORON COMPOUNDS
COLLISIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC RADIATION
ELEMENTS
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
HEAT TREATMENTS
HEATING
LINE DEFECTS
MOBILITY
PARTICLE MOBILITY
PHYSICAL PROPERTIES
PLASMA HEATING
RADIATIONS
SEMIMETALS
SPECTROSCOPY
360605* - Materials- Radiation Effects