Preparation of 1. 78-. mu. m wavelength Al/sub 0. 2/Ga/sub 0. 8/Sb/GaSb double-heterostructure lasers by molecular beam epitaxy
As the losses due to Rayleigh scattering decrease at a rate of lambda/sup 4/ with increasing wavelength lambda, the future generation of optical fibers, light sources, and detectors may well be operating at still longer wavelength beyond 1.55 ..mu..m. The present letter reports the first preparation of Al/sub 0.2/Ga/sub 0.8/Sb/GaSb double-heterostructure (DH) lasers by molecular beam epitaxy (MBE) operating at 1.78 ..mu..m. For Al/sub x/Ga/sub 1-x/Sb with x< or approx. =0.1, room-temperature photoluminescent intensity and linewidth similar to those of bulk GaSb substrate of similar carrier concentration were obtained. The Al/sub 0.2/Ga/sub 0.8/Sb/GaSb DH laser wafers grown by MBE have smooth, featureless, mirror-reflecting surfaces. Reflection high-energy electron diffraction study shows that the abrupt Al/sub 0.2/Ga/sub 0.8/Sb/GaSb interfaces were atomically smooth. Initial threshold current measurements gave a pulsed threshold current density of 3.4 kA/cm/sup 2/ for a diode of 380 x 200 ..mu..m and an active GaSb layer of 0.33 ..mu..m.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 5862187
- Journal Information:
- Appl. Phys. Lett.; (United States), Vol. 43:1
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR LASERS
MOLECULAR BEAM EPITAXY
ALUMINIUM ARSENIDES
CARRIER DENSITY
ELECTRON DIFFRACTION
EXPERIMENTAL DATA
FIBER OPTICS
GALLIUM ANTIMONIDES
HETEROJUNCTIONS
INFRARED RADIATION
LINE WIDTHS
MEDIUM TEMPERATURE
PHOTOLUMINESCENCE
PULSES
QUANTITY RATIO
RADIATION DETECTORS
RAYLEIGH SCATTERING
THICKNESS
THRESHOLD CURRENT
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CURRENTS
DATA
DIFFRACTION
DIMENSIONS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EPITAXY
GALLIUM COMPOUNDS
INFORMATION
JUNCTIONS
LASERS
LUMINESCENCE
MEASURING INSTRUMENTS
NUMERICAL DATA
PNICTIDES
RADIATIONS
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
420300* - Engineering- Lasers- (-1989)