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Title: Determination of the coherence length in high-mobility semiconductor-coupled Josephson weak links

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.348433· OSTI ID:5843393
 [1]
  1. IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (US)

A Nb-InAs-Nb superconductor-semiconductor-superconductor weak link based on a high-mobility homoepitaxial {ital n}-InAs film was reported recently (Akazaki, Kawakami, and Nittu J. Appl. Phys. {bold 66}, 6121 (1989)). Measurements of the electron concentration, effective mass, and mobility allowed the coherence length in the normal link to be calculated. The mobility was high enough that the dirty limit was not applicable in the temperature range ({similar to}2--7 K) over which the device critical current was measured. The temperature dependence of the critical current could not be fit by the usual theoretical form, even though an expression for the coherence length was used that should be applicable in both the clean and dirty limits. In this paper is demonstrated an excellent fit to the data, obtained by using the magnitude of the coherence length as a fitting parameter and assuming the dirty limit temperature dependence. This implies a coherence length proportional to {ital T}{sup {minus}1/2} but far shorter than that calculated from the known material parameters. It is suggested that a different scaling length may apply in high-mobility devices.

OSTI ID:
5843393
Journal Information:
Journal of Applied Physics; (USA), Vol. 69:7; ISSN 0021-8979
Country of Publication:
United States
Language:
English