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Title: Thin-film cadmium telluride and zinc phosphide solar cells. Final report, March 1981-May 1981

Technical Report ·
OSTI ID:5838206

The major objectives of this project are: (1) to demonstrate chemical vapor deposited cadmium telluride devices with total area greater than 1 cm/sup 2/ and photovoltaic efficiencies of at least 5%, and (2) to demonstrate the growth of device quality zinc phosphide films by CVD. Major efforts during this quarter were directed to the deposition and characterization of zinc phosphide and cadmium telluride films and solar cells. The deposition of zinc phosphide films by the reaction of zinc and phosphine in a hydrogen atmosphere has been continued. The composition of deposited films has been determined as a function of PH/sub 3//Zn molar ratio. For more efficient utilization of phosphine, a 850/sup 0/C zone has been added to the deposition apparatus. To reduce the electrical resistivity of zinc phosphide film and the interface resistance, the in-situ annealing of zinc phosphide in phosphine has been carried out. Attempts to prepare solar cell structures by depositing a thin film of zinc phosphide on an annealed film have been made; however, the results are inconclusive. The deposition of cadmium telluride films by the direct combination of the elements under reduced pressure and under atmospheric pressure has been carried out. Films deposited under reduced pressure exhibited more compact grain structures; however, they showed poor photoresponse due to the inability to control the reactant composition with the present apparatus. The composition of the films deposited under atmospheric pressure have been analyzed as a function of the Cd/Te molar ratio in the reactant mixture, and the dependence of short-circuit current density of Schottky barrier solar cells on the reactant composition has been investigated.

Research Organization:
Southern Methodist Univ., Dallas, TX (USA)
DOE Contract Number:
AC02-79ET23009
OSTI ID:
5838206
Report Number(s):
DOE/ET/23009-T12; ON: DE82001941
Country of Publication:
United States
Language:
English