Wafer-level radiation testing for hardness assurance

Conference · Sun Dec 01 00:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.124151· OSTI ID:5832611

Shaneyfelt, M R; Schwank, J R; Sexton, F W; Fleetwood, D M; Winokur, P S ^[1]; Hughes, K L ^[2]; Enlow, E W ^[3]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. L and M Technology, Albuquerque, NM (US)
3. Mission Research Corp., Albuquerque, NM (United States)

This paper reports that, to implement the Qualified Manufacturers List (QML) approach to hardness assurance in a practical and cost-effective manner, one must identify technology parameters that affect radiation hardness and bring them under statistical process control. To aid this effort, the authors have developed a wafer-level test system to map test-structure and IC response across a wafer. This system permits current-voltage and charge-pumping measurements on transistors, and high-frequency capacitance-voltage measurements on capacitors. For frequencies up to 50 MHz, the system provides a complete menu of functional and parametric IC tests. Wafer maps and histograms of test-structure and IC response are presented for a 1.2-{mu}m radiation-hardened CMOS technology to illustrate the capabilities of the wafer-level test system. Statistical and deterministic approaches to correlate test structure and IC response are discussed for this technology.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5832611
• Report Number(s): CONF-910751-; CODEN: IETNA
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 38:6; Conference: Institute of Electrical and Electronic Engineers (IEEE) annual international nuclear and space radiation effects conference, San Diego, CA (United States), 15-19 Jul 1991; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
INTEGRATED CIRCUITS
TESTING
EQUIPMENT
CAPACITANCE
COST
DIAGRAMS
ELECTRIC CONDUCTIVITY
FABRICATION
FREQUENCY DEPENDENCE
HARDNESS
MANUFACTURERS
MHZ RANGE 01-100
RADIATION HARDENING
RESPONSE FUNCTIONS
STATISTICAL MECHANICS
TRANSISTORS
ELECTRICAL PROPERTIES
ELECTRONIC CIRCUITS
FREQUENCY RANGE
FUNCTIONS
HARDENING
MECHANICAL PROPERTIES
MECHANICS
MHZ RANGE
MICROELECTRONIC CIRCUITS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)