Stop-cleaved InGaAsP lasers for monolithic optoelectronic integration

Journal Article · Wed May 15 00:00:00 EDT 1985 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95821· OSTI ID:5824478

Antreasyan, A; Chen, C Y; Logan, R A

We report a novel technique for locally cleaving the mirrors of semiconductor lasers without cleaving the entire substrate. The stop-cleaving technique involves the etching of holes on a substrate prior to the conventional cleaving procedure. The presence of the hole prevents the propagation of the cleavage plane along the entire substrate. The technique permits the fabrication of lasers with cleaved mirrors without imposing any limitation on the size of the substrate; thus, it is suitable for monolithic optoelectronic integration. InGaAsP lasers (lambda = 1.3 ..mu..m) with stop-cleaved mirrors have been fabricated and have threshold currents comparable to those with conventionally cleaved mirrors.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5824478
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 46:10
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
LASER MIRRORS
FABRICATION
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
CAVITIES
CLEAVAGE
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL STRUCTURE
CURRENTS
DATA
ELECTRIC CURRENTS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INFORMATION
LASERS
MICROSTRUCTURE
MIRRORS
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SURFACE FINISHING
420300* - Engineering- Lasers- (-1989)