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Title: Low-temperature reactive-sputter deposition of vanadium oxide

Technical Report ·
OSTI ID:5819946

Several oxides of vanadium (VO, V/sub 2/O/sub 3/, VO/sub 2/, V/sub 3/O/sub 5/, V/sub 6/O/sub 13/, V/sub 2/O/sub 5/) undergo a transition from metal to a semiconductor or insulator phase at a critical temperature. The change in crystal structure is accompanied by a large change in electrical and optical behavior. Therefore, these oxides have potential use, particularly in thin-film form, for a wide variety of applications involving thermally activated electronic or optical-switching devices. In this study, vanadium oxide films were grown on water-cooled sapphire, silicon, and glass substrates by reactive sputter deposition using a vanadium target and rf-excited argon discharges containing 0%-25% oxygen. Optical-emission spectroscopy was used for in-situ discharge diagnostics. Films were characterized by x-ray diffraction to determine crystallography and by double-beam spectrophotometry to determine optical absorption behavior in the 200-1200 nm spectral region. The results show that film crystallography evolves from single (110) orientation body-centered cubic vanadium to single (001) orientation orthorhombic vanadium pentoxide to a material in which there is no long-range atomic order detectable by x-ray diffraction as the sputtering gas oxygen content is increased. Changes in optical-absorption behavior that accompany the decrease in atomic order are presented and discussed.

Research Organization:
Wisconsin Univ., Milwaukee (USA)
OSTI ID:
5819946
Report Number(s):
AD-A-165476/3/XAB
Country of Publication:
United States
Language:
English