Comparison of the microstructure of AlN films grown by MOCVD and by PLD on sapphire substrates
- Univ. of Maryland, College Park, MD (United States)
- Howard Univ., Washington, DC (United States). Materials Science Research Center of Excellence
(0001) aluminium nitride thin films were grown epitaxially on (0001) sapphire substrates by MOCVD at 1,200 C and PLD at 800 C. Both films have the same epitaxial growth relationship: (0001){sub AlN}//(0001){sub Sap}, and the same in-plane relationship which shows a 30{degree} rotation between AlN and sapphire. The full width at half maximum (FWHM) of x-ray rocking curve of the MOCVD AlN film was 0.16{degree} and PLD AlN film was 0.2{degree}. Films grown by both MOCVD and PLD showed high crystalline quality. HRTEM images showed that these films are single crystalline with very low density of defects. Dislocations in the film parallel to the film/substrate interface were observed in both AlN films. Atomic force microscopy images showed that the MOCVD films have flatter and larger terraces than the PLD films. The PLD technique for AlN growth needs to be improved further. But both films have a surface roughness of approximately 100 nm.
- OSTI ID:
- 581074
- Report Number(s):
- CONF-961202-; ISBN 1-55899-353-3; TRN: IM9807%%161
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
- Country of Publication:
- United States
- Language:
- English
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