Photoluminescence and stimulated emission in Si- and Ge-disordered Al/sub x/Ga/sub 1-x/As-GaAs superlattices

Journal Article · Mon Jul 01 00:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335710· OSTI ID:5784026

Kaliski, R W; Gavrilovic, P; Meehan, K; Gavrilovic, J; Hsieh, K C; Jackson, G S; Jr, Holonyak N; Coleman, J J; Burnham, R D; Thornton, R L; Paoli, T L

Photoluminescence and absorption data are presented on Al/sub x/Ga/sub 1-x/As-GaAs superlattices (SLs) disordered into bulk-crystal Al/sub y/Ga/sub 1-y/As (0< or =y< or =x) by Si or Ge diffusion. The bulk-crystal Al/sub y/Ga/sub 1-y/As produced by impurity-induced disordering (by Al-Ga interchange) is determined by transmission electron microscopy, absorption measurements, and photoluminescence to be homogeneous, with an alloy composition (y) that agrees with the average Al concentration of the SL. For low enough Al concentration (yroughly-equal0.23

• Research Organization: Electrical Engineering Research Laboratory and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801
• OSTI ID: 5784026
• Journal Information: J. Appl. Phys.; (United States), Vol. 58:1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
ABSORPTIVITY
PHOTOLUMINESCENCE
STIMULATED EMISSION
SUPERLATTICES
GALLIUM ARSENIDES
CHEMICAL COMPOSITION
DIFFUSION
EXCITONS
IMPURITIES
SEMICONDUCTOR LASERS
TRANSMISSION ELECTRON MICROSCOPY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRON MICROSCOPY
EMISSION
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
LASERS
LUMINESCENCE
MICROSCOPY
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
QUASI PARTICLES
SEMICONDUCTOR DEVICES
420300* - Engineering- Lasers- (-1989)