InP:Fe photoconducting device
Patent
·
OSTI ID:5769523
A photoconducting device fabricated from Fe-doped, semi-insulating InP crystals exhibits an exponential decay transient with decay time inversely related to Fe concentration. Photoconductive gain as high as 5 is demonstrated in photoconducting devices with AuGe and AuSn contacts. Response times from 150 to 1000 picoseconds can be achieved.
- Assignee:
- Dept. of Energy
- Patent Number(s):
- US 4490709
- OSTI ID:
- 5769523
- Resource Relation:
- Patent File Date: Filed date 6 Dec 1982; Other Information: PAT-APPL-447349
- Country of Publication:
- United States
- Language:
- English
Similar Records
InP:Fe photoconducting device
InP:Fe Photoconducting device
InP:Fe photoconductors as photodetectors
Patent
·
·
OSTI ID:5769523
InP:Fe Photoconducting device
Patent
·
Sun Jan 01 00:00:00 EST 1984
·
OSTI ID:5769523
InP:Fe photoconductors as photodetectors
Journal Article
·
Fri Apr 01 00:00:00 EST 1983
· IEEE Trans. Electron Devices; (United States)
·
OSTI ID:5769523
+2 more
Related Subjects
47 OTHER INSTRUMENTATION
PHOTOCONDUCTORS
DESIGN
CRYSTALS
DOPED MATERIALS
GAIN
GERMANIUM COMPOUNDS
GOLD COMPOUNDS
INDIUM PHOSPHIDES
IRON ADDITIONS
PERFORMANCE
TIN COMPOUNDS
ALLOYS
AMPLIFICATION
INDIUM COMPOUNDS
IRON ALLOYS
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
TRANSITION ELEMENT COMPOUNDS
440300* - Miscellaneous Instruments- (-1989)
PHOTOCONDUCTORS
DESIGN
CRYSTALS
DOPED MATERIALS
GAIN
GERMANIUM COMPOUNDS
GOLD COMPOUNDS
INDIUM PHOSPHIDES
IRON ADDITIONS
PERFORMANCE
TIN COMPOUNDS
ALLOYS
AMPLIFICATION
INDIUM COMPOUNDS
IRON ALLOYS
MATERIALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
TRANSITION ELEMENT COMPOUNDS
440300* - Miscellaneous Instruments- (-1989)