GaInAs--AlInAs heterostructures for optical devices grown by MBE

Journal Article · Fri Apr 01 00:00:00 EST 1983 · J. Vac. Sci. Technol., B; (United States)

DOI:https://doi.org/10.1116/1.582488· OSTI ID:5767571

Welch, D F; Wicks, G W; Woodard, D W; Eastman, L F

The band gap of Ga/sub 0.47/In/sub 0.53/As corresponds to an emission wavelength of approx.1.65 ..mu..m. Lasers have been produced with Al/sub 0.48/In/sub 0.52/As as cladding layers operating at room temperature. The peak emission of Ga/sub 0.47/In/sub 0.53/As can be continuously varied from 1.65 to 1.2 ..mu..m by the use of the multiquantum well structures. This range of wavelengths covers the minimum loss and dispersion in optical fibers and will be applicable to integrated optics. Double heterostructure broad area lasers have been fabricated using AlInAs as cladding layers to the GaInAs active layer. Room temperature threshold current densities of 4.3 kA/cm/sup 2/ have been obtained for lasers with a 4500 A active regions. The first data on GaInAs/AlInAs quantum well emitters will be presented. 4 K photoluminescence from quantum well layers of 100, 150, and 180 A with 150 A AlInAs barrier layers produced emission at 1.27, 1.35, and 1.41 ..mu..m, respectively. Ga/sub 0.47/In/sub 0.52/As quantum well LED's have also been produced which emit at 1.34 ..mu..m.

• Research Organization: School of Electrical Engineering, Cornell University, Ithaca, New York 14853
• OSTI ID: 5767571
• Journal Information: J. Vac. Sci. Technol., B; (United States), Vol. 1:2
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
MOLECULAR BEAM EPITAXY
GALLIUM ARSENIDES
HETEROJUNCTIONS
FABRICATION
USES
INDIUM ARSENIDES
LIGHT EMITTING DIODES
SEMICONDUCTOR LASERS
ATTENUATION
CLADDING
ENERGY GAP
INFRARED RADIATION
LAYERS
OPTICAL FIBERS
OPTICAL SYSTEMS
OPTICS
PHOTOLUMINESCENCE
STIMULATED EMISSION
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DEPOSITION
ELECTROMAGNETIC RADIATION
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
FIBERS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
JUNCTIONS
LASERS
LUMINESCENCE
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
420300* - Engineering- Lasers- (-1989)
360601 - Other Materials- Preparation & Manufacture
360603 - Materials- Properties