A new CBrF/sub 3/ process for etching tapered trenches in silicon

Journal Article · Sat Aug 01 00:00:00 EDT 1987 · J. Electrochem. Soc.; (United States)

DOI:https://doi.org/10.1149/1.2100803· OSTI ID:5762019

Engelhardt, M; Schwarzl, S

A new process for etching trenches in bulk silicon for the generation of trench capacitors in highly integrated DRAM's is reported. Trenches, 1 ..mu..m wide and up to 2 ..mu..m deep, were etched in RIE mode with CBrF/sub 3/ using a single wafer etcher. The trenches have very smooth sidewalls. The slope of the sidewall can easily be controlled by the RF power. The possibility of tapering the trench in bulk silicon is attributed to the low selectivities of the process with regard to the oxide mask, leading to enhanced sputter etch of the mask.

• Research Organization: Siemens AG, Technology Center for Microelectronics, D-8000 Munich 83
• OSTI ID: 5762019
• Journal Information: J. Electrochem. Soc.; (United States), Vol. 134:8A
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CAPACITORS
FABRICATION
SILICON
ETCHING
BROMINE FLUORIDES
CARBON FLUORIDES
DIMENSIONS
INTEGRATED CIRCUITS
RADIOWAVE RADIATION
SPUTTERING
BROMINE COMPOUNDS
CARBON COMPOUNDS
ELECTRICAL EQUIPMENT
ELECTROMAGNETIC RADIATION
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
MICROELECTRONIC CIRCUITS
RADIATIONS
SEMIMETALS
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture
420800 - Engineering- Electronic Circuits & Devices- (-1989)