Development of pulsed processes for the manufacture of solar cells. [Ion implantation and annealing process]
This report describes the results of a 1-year program to develop the processes required for low-energy ion implantation for the automated production of silicon solar cells. The program included (1) demonstrating state-of-the-art ion implantation equipment and designing an automated ion implanter, (2) making efforts to improve the performance of ion-implanted solar cells to 16.5 percent AM1, (3) developing a model of the pulse annealing process used in solar cell production, and (4) preparing an economic analysis of the process costs of ion implantation. During the program, phosphorus ions at an energy of 10 keV and dose of 2 x 10/sup 15/ cm/sup -2/ were implanted in silicon solar cells to produce junctions, while boron ions at 25 keV and 5 x 10/sup 15/ cm/sup -2/ were implanted in the cells to produce effective back surface fields. An ion implantation facility with a beam current up to 4 mA and a production throughput of 300 wafers per hour was designed and installed. A design was prepared for a 100-mA, automated implanter with a production capacity of 100 MW/sub e/ per year. A Solar Array Manufacturing Industry Costing Standards (SAMICS) economic analysis of the automated process steps of ion implantation and pulse annealing indicated that junctions can be formed and annealed at a cost of less than 3 cents per watt. The efforts during this program represent a major advancement in developing the automated production of silicon solar cells with efficiencies greater than 16 percent AM1.
- Research Organization:
- Spire Corp., Bedford, MA (USA)
- DOE Contract Number:
- NAS-7-100-954786
- OSTI ID:
- 5720577
- Report Number(s):
- DOE/JPL/954786-6A
- Country of Publication:
- United States
- Language:
- English
Similar Records
Development and fabrication of a solar cell junction processing system. Quarterly report No. 2, July 1980
Development and fabrication of a solar cell junction processing system. Quarterly progress report No. 3, October 1980
Related Subjects
SILICON
ANNEALING
ION IMPLANTATION
SILICON SOLAR CELLS
PERFORMANCE
PRODUCTION
AMORPHOUS STATE
AUTOMATION
BORON IONS
COST
CRYSTAL DOPING
DESIGN
DIAGRAMS
ECONOMIC ANALYSIS
EFFICIENCY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EQUIPMENT
EXPERIMENTAL DATA
KEV RANGE 01-10
KEV RANGE 10-100
MANUFACTURING
MILLI AMP BEAM CURRENTS
MONOCRYSTALS
PHOSPHORUS IONS
POLYCRYSTALS
PROCESSING
RESEARCH PROGRAMS
SEMICONDUCTOR JUNCTIONS
STRESSES
TABLES
TEMPERATURE DEPENDENCE
THERMAL CONDUCTIVITY
ATOMIC IONS
BEAM CURRENTS
CHARGED PARTICLES
CRYSTALS
CURRENTS
DATA
DATA FORMS
DIRECT ENERGY CONVERTERS
ECONOMICS
ELEMENTS
ENERGY RANGE
HEAT TREATMENTS
INFORMATION
IONS
JUNCTIONS
KEV RANGE
NUMERICAL DATA
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SOLAR CELLS
THERMODYNAMIC PROPERTIES
140501* - Solar Energy Conversion- Photovoltaic Conversion