Germanium detector passivated with hydrogenated amorphous germanium
An electrical semiconductor device is described having a volume of crystalline germanium semiconductor material of predetermined bulk net impurity concentration and having a passivating layer on a surface of the volume of crystalline germanium semiconductor material wherein the passivating layer is a coating comprised of hydrogenated amorphous germanium. The coating has a composition similar to that which is deposited on the surface by sputtering of germanium in an atmosphere of controlled hydrogen content which atmosphere has a pressure of about 7 micromillimeters of mercury and a hydrogen content selected to be in the range of about 7% to about 17.5%. The passivating layer has a hydrogen content selected to passivate undesirable surface states in the crystalline material of the predetermined bulk net impurity concentration.
- Assignee:
- Dept. of Energy, Washington, DC
- Patent Number(s):
- US 4589006
- OSTI ID:
- 5717143
- Resource Relation:
- Patent File Date: Filed date 1 Nov 1984
- Country of Publication:
- United States
- Language:
- English
Similar Records
Semiconductor with protective surface coating and method of manufacture thereof. [Patent application]
Method of fabricating Schottky barrier solar cell
Related Subjects
GE SEMICONDUCTOR DETECTORS
PASSIVATION
PROTECTIVE COATINGS
AMORPHOUS STATE
CRYSTAL STRUCTURE
GERMANIUM
HYDROGEN
HYDROGENATION
IMPURITIES
LAYERS
PRESSURE DEPENDENCE
QUANTITY RATIO
SPUTTERING
CHEMICAL REACTIONS
COATINGS
ELEMENTS
MEASURING INSTRUMENTS
METALS
NONMETALS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments