Comparison of experimental measurements of power MOSFET SEBs in dynamic and static modes

Conference · Sun Dec 01 00:00:00 EST 1991 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:5707908

Calvel, P; Peyrotte, C; Baiget, A ^[1]; Stassinopoulos, E G ^[2]

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1. Alcatel Espace, Toulouse (FR)
2. Radiation Physics Associates, Potomac, MD (US)

In this paper a study to determine the Single Event Burnout (SEB) sensitivity for burnout of IRF-150 Power MOSFETs in both static and dynamic modes in terms of LET threshold and cross section is described. The dynamic tests were conducted with a power converter which was designed for actual space application. The results were compared with static measurements which were made during the exposure to the heavy ions. The data showed that the dynamic mode was less sensitive than the static by two orders of magnitude in cross section. It was also observed that ions with a range less than 30 microns did not produce destructive burnout in the dynamic mode even when their LET exceeded the threshold value. The extent of physical MOSFET damage in the destructive, dynamic tests appeared to correlate with the ion LET and source-drain voltage.

• OSTI ID: 5707908
• Report Number(s): CONF-910751-; CODEN: IETNA
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 38:6; Conference: Institute of Electrical and Electronic Engineers (IEEE) annual international nuclear and space radiation effects conference, San Diego, CA (United States), 15-19 Jul 1991; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
42 ENGINEERING
MOSFET
RADIATION EFFECTS
BURNOUT
CORRELATIONS
CROSS SECTIONS
DIRECT ENERGY CONVERTERS
HEAVY IONS
SENSITIVITY
SPACE
TESTING
THRESHOLD ENERGY
USES
CHARGED PARTICLES
ENERGY
FIELD EFFECT TRANSISTORS
IONS
MOS TRANSISTORS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
426000 - Engineering- Components
Electron Devices & Circuits- (1990-)