Retention and thermal release of deuterium implanted in beryllium
Beryllium was implanted at room temperature with deuterium at 500 and 1500 eV while the amount of D retained was measured as a function of incident fluence using nuclear-reaction analysis. At low fluences almost all of the incident D is retained but at high fluences the retention saturates. The retention is well described by a saturation model using a saturation concentration of 0.31 +- .05 D/Be and D depth profiles calculated by the TRIM code. Isochronal annealing of implanted samples shows that the D is thermally released in two states, a broad stage at 400 +- 100/sup 0/C and a stage at 125/sup 0/C. For samples implanted to saturation, most of the D is released in the 125/sup 0/C stage but no release occurs at this temperature for low-dose implants.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5688811
- Report Number(s):
- SAND-83-0950C; CONF-830942-4; ON: DE83017790
- Resource Relation:
- Conference: 3. topical meeting on fusion reactor materials, Albuquerque, NM, USA, 19 Sep 1983
- Country of Publication:
- United States
- Language:
- English
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