Optical-reflectance anisotropy in epitaxial metastable (GaAs) sub 1 minus x (Si sub 2 ) sub x (001) alloys: A probe for the zinc-blende--to--diamond structural transition
- Instituto de Fisica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi, San Luis Potosi, Mexico (MX)
- Department of Materials Science, The Coordinated Science Laboratory, the Materials Research Laboratory, University of Illinois, 1101 West Springfield Ave., Urbana, Illinois 61801 (USA)
Anisotropy in the above-band-gap optical reflectance along the (110) and (1{bar 1}0) directions has been used to investigate long-range atomic ordering in metastable epitaxial (GaAs){sub 1{minus}{ital x}}(Si{sub 2}){sub {ital x}}(001) alloys as a function of Si concentration {ital x}. The amplitude of the differentiated reflectance-difference signal was found to decrease monotonically with increasing {ital x} and reach zero, corresponding to the critical concentration for the zinc-blende--to--diamond transition, at {ital x}{congruent}0.37, consistent with x-ray-diffraction results. The highest sensitivity in the optical-anisotropy spectra was obtained in the spectral region near the {ital E}{sub 0}{sup {prime}} critical point (4.5 eV in GaAs).
- OSTI ID:
- 5686421
- Journal Information:
- Physical Review, B: Condensed Matter; (USA), Vol. 43:17; ISSN 0163-1829
- Country of Publication:
- United States
- Language:
- English
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