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Title: UV photon assisted control of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayers

Conference · · Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States)
OSTI ID:5684076
; ;  [1]
  1. Technion - Israel Inst. of Technology, Haifa (Israel)

The technology to control the interface charge density between CdTe substrates and CdTe epilayers grown by metalorganic chemical vapor deposition is studied. The interface charge is determined by the modified built-in potential derived from capacitance-voltage characteristics of Schottky contacts formed on the epilayers. Novel ultraviolet (UV) photon assisted and photo thermal surface pretreatments that control the interface between p-type CdTe substrates and CdTe epilayers are reported. The substrates are exposed to UV radiation provided by a high pressure Hg lamp operating at 600 W with a wide emission spectrum between 190 and 300 nm. The UV photon assisted surface pretreatment with hydrogen is compared with additional surface pretreatments: thermal pretreatment with hydrogen (without UV photons) and UV photo thermal pretreatment with hydrogen. The UV photon assisted and the UV photo thermal surface pretreatments with hydrogen reduce the interface charge density to a practically negligible value. In addition, the p-type doping level of the substrate is reduced considerably in a layer of few microns adjacent to the interface. 24 refs., 6 figs., 1 tab.

OSTI ID:
5684076
Report Number(s):
CONF-9210408-; CODEN: JECMA5
Journal Information:
Journal of Electronic Materials (A.I.M.E. Metallurgical Society); (United States), Vol. 22:8; Conference: U.S. workshop on the physics and chemistry of mercury cadmium telluride and other IR materials, Danvers, MA (United States), 13-15 Oct 1992; ISSN 0361-5235
Country of Publication:
United States
Language:
English

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