Synthesis of dilute magnetic semiconductors by ion implantation. [CdMnTe synthesis]
We have synthesized layers of CdMnTe by implantation of Mn into CdTe. Samples of CdTe have been implanted with Mn ions of 60 keV energy to fluences in the range 1 x 10/sup 13/ cm/sup -2/ to 2 x 10/sup 16/ cm/sup -2/ resulting in local concentrations of up to 10% at the maximum of the Mn distribution. Rutherford backscattering-channeling analysis has been used to study the radiation damage after implantation and after subsequent rapid thermal annealing (RTA). These experiments reveal that RTA for 15 sec at a temperature T greater than or equal to 700/sup 0/C results in the complete recovery of the lattice order, without affecting the stoichiometry of CdTe. Photoluminescence (PL) measurements of a sample showing complete annealing reveal an increase in the band gap corresponding to the synthesis of very dilute (x approx. = 0.004) Cd/sub 1-x/Mn/sub x/Te. A shift of the excitonic PL peak to lower energies is observed when a magnetic field H less than or equal to 1T is applied. These measurements provide clear evidence for the synthesis of a DMS by ion implantation of Mn into CdTe.
- Research Organization:
- Massachusetts Inst. of Tech., Cambridge (USA); Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5659946
- Report Number(s):
- CONF-8606101-3; ON: DE86013263
- Resource Relation:
- Conference: 5. international conference on ion beam modification of materials, Catania, Italy, 9 Jun 1986
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
CADMIUM TELLURIDES
ION IMPLANTATION
MANGANESE TELLURIDES
PRODUCTION
ANNEALING
BACKSCATTERING
ELECTRONIC STRUCTURE
ION BEAMS
KEV RANGE 10-100
MANGANESE IONS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
RUTHERFORD SCATTERING
BEAMS
CADMIUM COMPOUNDS
CHALCOGENIDES
CHARGED PARTICLES
ELASTIC SCATTERING
ENERGY RANGE
HEAT TREATMENTS
IONS
KEV RANGE
LUMINESCENCE
MANGANESE COMPOUNDS
RADIATION EFFECTS
SCATTERING
TELLURIDES
TELLURIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
360605* - Materials- Radiation Effects