Single event upset rate estimates for a 16-K CMOS SRAM
A radiation-hardened 16-K CMOS SRAM has been developed for satellite and deep space applications. The RAM memory cell was modeled to predict the critical charge, necessary for single-particle upset, as a function of temperature, total dose, and hardening feedback resistance. Laboratory measurements of the single event cross section and effective funnel length were made using the Lawrence Berkeley Laboratory's 88-inch cyclotron to generate high energy krypton ions. The combination of modeled and measured parameters permitted estimation of the upset rate for the ramcell, and the mean-time-to-failure for a 512-K word, 22-bit memory system employing error detection and correction circuits while functioning in the Adam's ''90% worst case'' cosmic ray environment.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5619962
- Report Number(s):
- SAND-85-0134C; CONF-850711-1; ON: DE85006976
- Resource Relation:
- Conference: 22. annual conference on nuclear and space radiation effects, Monterey, CA, USA, 22 Jul 1985; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR STORAGE DEVICES
PHYSICAL RADIATION EFFECTS
COMPUTERIZED SIMULATION
COSMIC RADIATION
ERRORS
KRYPTON IONS
RADIATION HARDENING
RELIABILITY
CHARGED PARTICLES
HARDENING
IONIZING RADIATIONS
IONS
MEMORY DEVICES
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SIMULATION
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems