Band-gap renormalization in semiconductor quantum wells containing carriers

Journal Article · Thu Aug 15 00:00:00 EDT 1985 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.32.2266· OSTI ID:5576361

Kleinman, D A; Miller, R C

A theoretical calculation is presented of the so-called ''gap renormalization'' due to free carriers for the quasi-two-dimensional (2D) electrons or holes confined in a semiconductor quantum well. A general theory of the effect is developed assuming parabolic subbands, the Hubbard approximation (random-phase approximation) for the correlation energy, and a model potential containing the well thickness for the effective 2D Coulomb interaction. Results are presented for gap renormalization versus carrier density for GaAs wells of 81 and 217 A thickness. An experimental measurement of gap renormalization is presented which is based on an analysis of the excitation and luminescence spectra of a p-type modulation-doped Ga(Ga/sub 1-x/Al/sub x/)As multilayer sample of well width 107 A and hole density 5.3 x 10/sup 10/ cm/sup -2/. The calculated value is in excellent agreement with the experimental value (6.3 meV) in this case.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 5576361
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Vol. 32:4
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SEMICONDUCTOR MATERIALS
ENERGY GAP
CARRIER DENSITY
ELECTRON CORRELATION
ELECTRONS
GALLIUM ARSENIDES
HOLES
RANDOM PHASE APPROXIMATION
RENORMALIZATION
ARSENIC COMPOUNDS
ARSENIDES
CORRELATIONS
ELEMENTARY PARTICLES
FERMIONS
GALLIUM COMPOUNDS
LEPTONS
MATERIALS
PNICTIDES
360603* - Materials- Properties