Dispersion of the refractive index of GaAs and Al /SUB x/ Ga /SUB 1-x/ As

Journal Article · Sun May 01 00:00:00 EDT 1983 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1983.1071931· OSTI ID:5553059

Jensen, B; Torabi, A

The real part of the complex refractive index near the fundamental absorption edge is calculated for the ternary compound Al /SUB x/ Ga /SUB 1-x/ As, 0 less than or equal to x less than or equal to 0.3, as a function of frequency. An analytical expression for n is given which is derived from a quantum mechanical calculation of the dielectric constant of a semiconductor assuming the band structure of the Kane theory. The expression obtained is a function of bandgap energy, effective electron and heavy hole masses, the spin orbit splitting energy, the lattice constant, and the carrier concentration for n-type or p-type materials. The refractive index at the absorption edge is found as a function of the material parameters above. This enables one to express theoretical results in terms of basic material parameters only, with no adjustable constants. Comparison of theory with available experimental data is given for various reported values of the bandgap energy and effective masses as functions of mole fraction x.

• Research Organization: Dept. of Physics, Boston University, Boston, MA 02215
• DOE Contract Number: AC02-79ER10444
• OSTI ID: 5553059
• Journal Information: IEEE J. Quant. Electron.; (United States), Vol. 19:5
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
REFRACTIVITY
GALLIUM ARSENIDES
LASER MATERIALS
ABSORPTION
CARRIER DENSITY
DIELECTRIC PROPERTIES
DISPERSIONS
ENERGY GAP
HOLES
LASERS
SEMICONDUCTOR DEVICES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRICAL PROPERTIES
GALLIUM COMPOUNDS
MATERIALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
PNICTIDES
420300* - Engineering- Lasers- (-1989)
360603 - Materials- Properties