Liquid phase epitaxy techniques for compound semiconductor growth
Liquid phase epitaxy (LPE) is method of crystal growth well suited to the preparation of a wide range of compound semiconductor materials, including GaAs, AlAs, GaP, InP, and GaSb, as well as their ternary and quaternary alloys. The advantages of LPE over other solution growth methods are substantial, primarily in material purity, doping flexibility, and dimensional control. It has particular advantages in achieving the complex multilayer structures required for many interesting optical devices, such as injection lasers, light emitting diodes, and photodetectors. LPE has appeared in many configurations in recent years, with the dominant variation at present being the sliding boat method. A good understanding of the capabilities of this method can be obtained by studying the growth of GaAs-Al/sub x/Ga/sub 1-x/As heterostructures.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5510525
- Report Number(s):
- SAND-82-0025C; CONF-820107-4; ON: DE82006299
- Resource Relation:
- Conference: SPIE optical coatings for energy efficiency and solar applications conference, Los Angeles, CA, USA, 25 Jan 1982
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALUMINIUM ARSENIDES
EPITAXY
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDES
CRYSTAL GROWTH
LAYERS
LIQUIDS
PHASE STUDIES
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
FLUIDS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
360601* - Other Materials- Preparation & Manufacture